DatasheetsPDF.com

BLC8G27LS-160AV Datasheet

Part Number BLC8G27LS-160AV
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC8G27LS-160AV DatasheetBLC8G27LS-160AV Datasheet (PDF)

BLC8G27LS-160AV Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 31.6 14.5 D (%) 43 ACPR (dBc) 30 [1] [1] Test sign.

  BLC8G27LS-160AV   BLC8G27LS-160AV






Power LDMOS transistor

BLC8G27LS-160AV Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 31.6 14.5 D (%) 43 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling leads to enable improved video bandwidth  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protect.


2018-04-26 : BLM8G0710S-60PBG    BLM8G0710S-60PB    BLM8G0710S-45ABG    BLM8G0710S-45AB    BLM8G0710S-30PBG    BLM8G0710S-30PB    BLM8G0710S-15PBG    BLM8G0710S-15PB    BLM8D1822S-50PBG    BLM8D1822S-50PB   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)