BLC8G27LS-180AV

BLC8G27LS-180AV Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 28 14 D (%) 43.5 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation  Low thermal resistance providing excellent thermal stability  Integrated ESD protection  Designed for low memory effects providing excellent pre-distortability  Lower output capacitance for improved performance in Doherty applications  Asymmetrical design to achieve optimal ef...