Power LDMOS transistor
BLC8G27LS-210PV
Power LDMOS transistor
Rev. 4 — 24 November 2017
Product data sheet
1. Product profile
1.1 General de...
Description
BLC8G27LS-210PV
Power LDMOS transistor
Rev. 4 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D
ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
2600 to 2700 1730 28 65
17 30
29 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth performance (150 MHz typical) Designed for broadband operation (2500 MHz to 2700 MHz) Lower output capacitance for improved performance i...
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