Power LDMOS transistor
BLC8G27LS-240AV
Power LDMOS transistor
Rev. 5 — 2 December 2016
Product data sheet
1. Product profile
1.1 General des...
Description
BLC8G27LS-240AV
Power LDMOS transistor
Rev. 5 — 2 December 2016
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo board. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS PL(AV)
Gp
D ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2500 to 2690
28 56
14.5 43 35 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High-efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Asymmetric design to achieve optimum efficiency across the band Lower output capacitance for improved perfo...
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