BLC9G21LS-60AV

BLC9G21LS-60AV Power LDMOS transistor Rev. 1 — 6 July 2017 Product data sheet 1. Product profile 1.1 General description 60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 1930 to 1990 28 2.5 17.5 D (%) 30 ACPR (dBc) 39 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Asymmetric design to achieve optimum efficiency across the band  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-distortion  Internally matched for ease of use  Integr...