TRANSISTORS. BLD122D Datasheet

BLD122D Datasheet PDF

Part BLD122D
Description TRANSISTORS
Feature Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS ●: .
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Shenzhen SI Semiconductors Co., LTD. Product Specificatio BLD122D Datasheet
BLD122D Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 BLD122D Datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specificatio BLD122DL Datasheet




BLD122D
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
●应用: 电子镇流器 节能灯
■ ■APPLICATIONS: ELECTRONIC BALLAST FLUORESCENT LAMP
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-92/92S/126/126S/SOT-89
参数
符号
额定值
单位
PARAMETER
SYMBOL
VALUE
UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
600
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC
1.2 A
集电极耗散功率
Total Power Dissipation
TO-92/92S:13
W
Ptot TO-126/126S:25
SOT-89:13
最高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg
-65-150
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
°C
参数
符号
测试条件
最小值
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN
集电极-基极截止电流
Collector-Base Cutoff Current
ICBO
VCB=600V
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
VCE=400V,IB=0
集电极-基极电压
Collector-Base Voltage
VCBO
IC=1mA,IE=0
600
集电极-发射极电压
Collector-Emitter Voltage
VCEO
IC=10mA,IB=0
400
发射极-基极电压
Emitter- Base Voltage
VEBO
IE=1mA,IC=0
9
BLD122D
RoHS COMPLIANT
SOT-89
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=0.5A,IB=0.1A
IC=1A,IB=0.5A
IC=0.5A,IB=0.1A
0.5
V
0.6
1.2 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE
VCE=10V,IC=0.1A
10 40
VCE=5V,IC=1.2A
5
贮存时间/Storage Time
下降时间/Falling Time
内置二极管正向压降
Diode Forward Voltage
tS
tf
VCC=5V,IC=0.25A
(UI9600)
1.5 3.0
0.8 µs
VF IF=1.0A
2.6 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
TO-92 普通袋装/NORMAL PACKING
BLD122D TO-92
BLD122D TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
BLD122D TO-92S
BLD122D TO-92S-HF
TO-92 盒式编带/AMMOPACK
BLD122D TO-92-AP
BLD122D TO-92-AP-HF
TO-126 普通袋装/NORMAL PACKING
BLD122D TO-126
BLD122D TO-126-HF
TO-126S 普通袋装/NORMAL PACKING
BLD122D TO-126S
BLD122D TO-126S-HF
SOT-89 盘式编带/TAPE&REEL
BLD122D SOT-89-TR
BLD122D SOT-89-TR-HF
Si semiconductors 2013.12
1



BLD122D
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
NPN D 系列晶体管/ D SERIES TRANSISTORS
SOA (DC)
%
120
TO-126/126S
100
80
TO-92/92S/SOT-89
60
40
20
0
0
产品规格书
Product Specification
BLD122D
PtotTj
IS/B
Ptot
50 100 150 Tj(℃)200
hFE
100
hFE - Ic
Tj=125
Tj=25
Tj= 40
10
hFE
100
hFE - Ic
Tj=125
Tj=25
Tj= 40
10
Vce=1.5V
1
0.001
0Tj1
0.1
0
Vces(v)
10
Vcesat - Ic
1
hFE=5
1
Tj=125
Tj=25
Tj= 40
Ic(A)10
0.1
0.01
0.1
Ic(A)
1 10
Vce=5V
1
0.001
0.01
0.1
1 Ic(A)10
Vbes(v)
1.8
1.6 hFE=5
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.1
Vbesat - Ic
Tj= 40
Tj=25
Tj=125
Ic(A)
1 10
Si semiconductors 2013.12
2




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