BLD123D

BLD123D NPN /SILICON NPN TRANSISTOR : 、、。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC(Ta=25℃) Tj Tsag 600 400 9.0 1.75 1.0 150 -55～150 V V V A W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) VCE(sat)(1) VCE(sat)(2) VCE(sat)(3) VBE(sat) tf ts fT IC=1mA IC=10mA IE=1mA VCB=600V VCE=400V VEB=9.0V VCE=5V VCE=5V VCE=5V IC=500mA IC=200mA IC=1.5A IC=500mA VCE=5V (UI9600) VCE=10V IC=0.1A IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC=200mA IC=1mA IC=1.5A Ib=100mA Ib=20mA Ib=500mA Ib=100mA IC=0.25A f=1MHz http://www.lzg.so 600 400 9.0 0.1 0.1 0.1 40 V V V mA mA mA 10 7 5 0.4 0.3 0.9 1.2 0.8 4.0 5 V V V V μS μS MHz Free Datasheet http://www.Datasheet4U.com BLD123D SOA(DC) PC-TC hFE-Ic hFE-Ic Vces-IC Vbes-IC tS-Ta hFE-Ta http://www.lzg.so Free Datasheet http://www.Datasheet4U.com ...