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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
www.DataSheet4U.com
Philips Semiconductors Product specification
Base station LDMOS transistors
FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – G.
Base station LDMOS transistors
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
www.DataSheet4U.com
Philips Semiconductors Product specification
Base station LDMOS transistors
FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • 70 W CW performance • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
BLF0810-90; BLF0810S-90
APPLICATIONS • RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
handbook, halfpage
1
1 3
2 Top view
3
MBK394
2 Top view
MBL105
Fig.1 Simplified outline SOT502A (BLF0810-90).
Fig.2 Simplified outline SOT502B (BLF0810S-90)
QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Class-AB (2-tone).