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BLF0810-90 Datasheet

Part Number BLF0810-90
Manufacturers NXP
Logo NXP
Description Base station LDMOS transistors
Datasheet BLF0810-90 DatasheetBLF0810-90 Datasheet (PDF)

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 www.DataSheet4U.com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – G.

  BLF0810-90   BLF0810-90






Base station LDMOS transistors

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 www.DataSheet4U.com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • 70 W CW performance • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION BLF0810-90; BLF0810S-90 APPLICATIONS • RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION handbook, halfpage 1 1 3 2 Top view 3 MBK394 2 Top view MBL105 Fig.1 Simplified outline SOT502A (BLF0810-90). Fig.2 Simplified outline SOT502B (BLF0810S-90) QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Class-AB (2-tone).


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