BLF0910H6L500

BLF0910H6L500; BLF0910H6LS500 Power LDMOS transistor Rev. 2 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW [1] 915 50 500 18 CW pulsed [2][3] 915 50 500 19.5 [1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s;  = 10 %. D (%) 61 62.5 1.2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Integrated ESD protection  Designed for broadband operation (900 MHz to 930 MHz)  Internally input matched  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Ind...