DatasheetsPDF.com

BLF10M6LS200 Datasheet

Part Number BLF10M6LS200
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLF10M6LS200 DatasheetBLF10M6LS200 Datasheet (PDF)

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal: .

  BLF10M6LS200   BLF10M6LS200






Part Number BLF10M6LS200
Manufacturers NXP
Logo NXP
Description Power LDMOS transistor
Datasheet BLF10M6LS200 DatasheetBLF10M6LS200 Datasheet (PDF)

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal: 3GPP .

  BLF10M6LS200   BLF10M6LS200







Power LDMOS transistor

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications  RF power amplifi.


2018-04-27 : NAS1368    NAS1368N10C    YS8105    XL7005A    C5420    BPC2425M9X250    BPC2425M7X60    BPC10M6X2S200    BLP25RFE001    BLP05M7200   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)