BLF183XR

BLF183XR; BLF183XRS Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) VDS PL (V) (W) pulsed RF 108 50 350 CW 88 to 108 50 388 pulsed RF 30 to 512 50 400 CW 30 to 512 35 193 Gp (dB) 28 26 15 14 D (%) 75 80 48 47 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications BLF183XR; BLF183XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF183XR (SOT1...