BLF188XRS

BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) CW 2 to 30 27 41 60 72.5 81.4 88 to 108 108 200 pulsed RF 81.4 81.4 108 DVB-T 174 to 230 VDS PL (V) (W) 50 1270 50 1400 50 1200 48 1240 50 1350 50 1200 50 1320 50 1200 50 1288 50 1200 50 1400 50 1400 50 225 Gp (dB) 29.0 23.7 22.0 22.0 23.1 27.1 22.5 26.5 19.3 25.8 25.4 24.0 23.8 D (%) 75 73 82 77 83 77.8 85 83 68.3 85 81 73 29 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLF188XR; BLF188XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF188XR (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF188XRS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol     [1]     V\P    [1]      V\P Table 3. Ordering information Type...