BLF189XRB

BLF189XRB; BLF189XRBS Power LDMOS transistor Rev. 1 — 3 October 2017 Product data sheet 1. Product profile 1.1 General description A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1900 Gp (dB) 26 D (%) 72.5 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness VSWR > 65 : 1  High efficiency  Excellent thermal stability  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications BLF189XRB; BLF189XRBS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF189XRB (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF189XRBS (SOT539B) 1 drain1 2 drain2 3 gate1...