BLF2022-30

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Product specification Supersedes data of 2002 Dec 19 2003 Feb 24 www.DataSheet4U.com Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA: – Output power = 3.5 W (AV) – Gain = 12.9 dB – Efficiency = 16.5% – ACPR = −45 dBc at 3.84 MHz – dim = −42 dBc Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (2000 to 2200 MHz) Internally matched for ease of use. 2 1 BLF2022-30 PINNING - SOT608A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 APPLICATIONS RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB two-carrier W-CDMA test model 1, 64 channels f (MHz) f1 = 2170; f2 = 2170.1 f1 = 2155; f2 = 2165 VDS (V) 28 28 IDQ (mA) 240 270 PL (W) Top view MBL290 Fig.1 Simplified outline (SOT608A). Gp (dB) 12.6 12.9 ηD (%) 34.3 16.5 dim (dBc) −29.5 −42 ACLR5 (dBc) − −45 30 (PEP) 3.5 (AV) CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge d...