BLF2043F

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 19 2002 Mar 05 Philips Semiconductors UHF power LDMOS transistor Product specification BLF2043F FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance Designed for broadband operation (HF to 2.2 GHz). PINNING - SOT467C PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange APPLICATIONS Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. 1 2 Top view 3 MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) CW, class-AB (2-tone) f1 = 2200; f2 = 2200.1 26 PL (W) 10 (PEP) Gp (dB) >11 ηD dim (%) (dBc) >30 ≤−26 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature PARAMETER MIN. − − − −65 − MAX. 65 ±15 2.2 +150 200 UNIT V V A °C °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling....