DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF2043F UHF power LDMOS transistor
Product specification Supersedes data of...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF2043F UHF power LDMOS transistor
Product specification Supersedes data of 2000 Oct 19
2002 Mar 05
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2043F
FEATURES
High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators,
reducing common mode inductance Designed for broadband operation (HF to 2.2 GHz).
PINNING - SOT467C
PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange
APPLICATIONS
Communication transmitter applications in the UHF frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
1
2 Top view
3
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f (MHz)
VDS (V)
CW, class-AB (2-tone)
f1 = 2200; f2 = 2200.1
26
PL (W)
10 (PEP)
Gp (dB)
>11
ηD dim (%) (dBc)
>30 ≤−26
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS VGS ID Tstg Tj
drain-source
voltage gate-source
voltage drain current (DC) storage temperature junction temperature
PARAMETER
MIN.
− − − −65 −
MAX.
65 ±15 2.2 +150 200
UNIT
V V A °C °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling....