DatasheetsPDF.com

BLF242 Datasheet

Part Number BLF242
Manufacturers NXP
Logo NXP
Description HF/VHF power MOS transistor
Datasheet BLF242 DatasheetBLF242 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability. 2 3 MSB057 BLF242 PIN CONFIGURATION halfpage 1 4 d g MBB072 s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor design.

  BLF242   BLF242






Part Number BLF242
Manufacturers ASI
Logo ASI
Description HF-VHF POWER MOSFET
Datasheet BLF242 DatasheetBLF242 Datasheet (PDF)

HF-VHF POWER MOSFET N-Channel Enhancement Mode BLF242 DESCRIPTION: The ASI BLF242 is intended for use in 28 VDC large signal Applications. FEATURES INCLUDE: • PG = 16 dB Typical at 175 MHz • Omnigold™ Metalization System • Class-B MAXIMUM RATINGS ID 1.0 A VDS 65 V VGS ±20 V PDISS 16 W @ TMB ≤ 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 11 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A SD Ø.125 NOM. FULL R J .125 GS C D E F GH I DIM MINIMUM inches / mm A .220 / 5.59.

  BLF242   BLF242







HF/VHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability. 2 3 MSB057 BLF242 PIN CONFIGURATION halfpage 1 4 d g MBB072 s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common s.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)