BLF2425M6LS180P

BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.2 Features and benefits  Easy power control  Integrated ESD protection  High efficiency  Excellent thermal stability  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating. BLF2425M6L(S)180P Power LDMOS...