BLF578

BLF578 Power LDMOS transistor Rev. 4 — 1 December 2016 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation CW pulsed RF f (MHz) 108 225 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 24 D (%) 75 71 1.2 Features and benefits  Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1200 W  Power gain = 24 dB  Efficiency = 71 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (10 MHz to 500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter appli...