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BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
Rev. 01 — 27 May 2010 Objective data sheet
1. P...
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BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
Rev. 01 — 27 May 2010 Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation IS-95
[1]
f (MHz) 2500 to 2700
IDq (mA) 1300
VDS (V) 28
PL(AV) (W) 20
Gp (dB) 17.0
ηD (%) 22
ACPR885k (dBc) −45[1]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
RF power
amplifiers for W-CDMA base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range
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NXP Semiconductors
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 1 2 3 4 5
[1]
Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source
[1] [1]
Simplified outline
Graphic symbol
BLF7G27L-140 (SOT502...