BLF881S

BLF881; BLF881S UHF power LDMOS transistor Rev. 01 — 10 December 2009 Preliminary data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.1 858 PL - PL(PEP) 140 - PL(AV) Gp (W) 33 21 21 ηD 49 34 IMD3 −34 - IMDshldr (dBc) −33[1] (W) (W) (dB) (%) (dBc) Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features www.DataSheet4U.com „ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 140 W ‹ Power gain = 21 dB ‹ Drain efficiency = 49 % ‹ Third order intermodulation distortion = −34 dBc „ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Average output power = 33 W ‹ Power gain = 21 dB ‹ Drain efficiency = 34 % ‹ Shoulder distance = −33 dBc (4.3 MHz from center frequency) „ Integrated ESD protection „ Excellent ruggedness „ High ...