BLF888AS

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f (MHz) CW CW (42 V) 2-tone, class-AB pulsed, class-AB [1] DVB-T (8k OFDM) 650 650 f1 = 860; f2 = 860.1 860 858 858 DVB-T (8k OFDM) 858 858 [1] [2] [3] Measured at  = 10 %; tp = 100 s. Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. PL(AV) (W) 250 110 125 110 120 PL(M) (W) 600 500 600 - Gp (dB) 20 20 21 20 21 21 20 20 D (%) 67 69 46 58 31 32.5 30 31 IMD3 (dBc) 32 - IMDshldr (dBc) 32 [2] 30 [2] 32 [2] 31 [2] PAR (dB) 8.2 [3] 8.0 [3] 8.0 [3] 7.8 [3] RF performance in a common source narrowband test circuit RF performance in a common source 470 MHz to 860 MHz broadband test circuit 1.2 Features and benefits           Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM applications High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching f...