BLF888BS

BLF888B; BLF888BS UHF power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.1 250 858 120 - 21 46 34 - 21 33 - 31[1] RF performance in a common source 470 MHz to 860 MHz broadband test circuit DVB-T (8k OFDM) 858 120 - 20 32 - 32 [1] PAR (dB) 8.2 [2] 8.0 [2] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input si...