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BLF8G09LS-270GW Datasheet

Part Number BLF8G09LS-270GW
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLF8G09LS-270GW DatasheetBLF8G09LS-270GW Datasheet (PDF)

BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) .

  BLF8G09LS-270GW   BLF8G09LS-270GW






Power LDMOS transistor

BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 716 to 728 28 67 20 33 35[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits  Excellent ruggedness  Device can operate with the supply current delivered through the video leads  High efficiency  Low thermal resistance providing excellent thermal stability  Designed for broadband operation (716 MHz to 960 MHz)  Lower output capacitance for improved perf.


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