Power LDMOS transistor
BLF8G27LS-100V; BLF8G27LS-100GV
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile...
Description
BLF8G27LS-100V; BLF8G27LS-100GV
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2500 to 2700
900 28 25
17 28 32 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Decoupling leads to enable improved video bandwidth (110 MHz typical) Designed for broadband operation (2500 MHz to 2700 MHz) Lower output capacitance for improved performance in Doherty app...
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