Power LDMOS transistor
BLF8G27LS-140
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General desc...
Description
BLF8G27LS-140
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 32 45
17.4 32 30 [1]
2-carrier W-CDMA
2600 to 2700
1300 28 35
17.0 29 31 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use In...
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