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BLF988 Datasheet

Part Number BLF988
Manufacturers NXP
Logo NXP
Description Power LDMOS transistor
Datasheet BLF988 DatasheetBLF988 Datasheet (PDF)

BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-t.

  BLF988   BLF988






Part Number BLF988
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLF988 DatasheetBLF988 Datasheet (PDF)

BLF988; BLF988S Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit .

  BLF988   BLF988







Power LDMOS transistor

BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.1 860 250 - 20.8 46 32 - 600 19.8 58 - 1.2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W  High power gain  High efficiency  Designed for broadband operation (400 MHz to 1000 MHz)  Internal input matching for high gain and optimum broadband operation  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Communication transmitter applications  Industrial applications NXP Semiconductors BLF988; BLF988S Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF988 (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF988S (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 5 4 2 sym117 12 1 5 34 .


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