BLF9G38LS-90P

BLF9G38LS-90P Power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) IS-95 3400 to 3600 28 15.1 12.7 37.0 ACPR (dBc) 37 [1] [1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8  13; PAR = 9.7 dB at 0.01 % probability. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifier for LTE base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range NXP Semiconductors BLF9G38LS-90P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol      [1]    V\P Table 3. Ordering information Type number Package Name Descript...