BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010
www.DataSheet4U.com
Product data sheet
1. ...
BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.
Table 1. Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 36 IDq (mA) 150 PL (W) Gp (dB) ηD (%) 47 Pdroop(pulse) (dB) 0.2 tr (ns) 15 tf (ns) 5
250 13
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply
voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 % High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance.
1.3 Applications
L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL1214-250R www.DataSheet4U.com
LDMOS L-band radar power transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering info...