BLL1214-250R

BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Table 1. Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 36 IDq (mA) 150 PL (W) Gp (dB) ηD (%) 47 Pdroop(pulse) (dB) 0.2 tr (ns) 15 tf (ns) 5 250 13 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features „ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: ‹ Output power = 250 W ‹ Power gain = 13 dB ‹ Efficiency = 47 % „ High power gain „ Easy power control „ Excellent ruggedness „ Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications „ L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range NXP Semiconductors BLL1214-250R www.DataSheet4U.com LDMOS L-band radar power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering info...