BLL1214-35

DISCRETE SEMICONDUCTORS www.datasheet4u.com DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor FEATURES www.datasheet4u.com High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION 2 1 BLL1214-35 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Top view MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; t = 1 ms; δ = 10 % f (MHz) 1200 to 1400 VDS (V) 36 PL (W) 35 Gp (dB) >13 ηD (%) >43 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature CONDITIONS − − under RF conditions; Th ≤ 25 °C − −65 − MIN. MAX. 75 ±15 110 +150 200 V V W °C °C UNIT 2002 Sep 27 2 Philips Semiconductors Product specification L-band radar LDMOS driver transistor THERMAL CHARACTERISTICS www.datasheet4u.com SYM...