BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profil...
BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation f
tp
VDS PL Gp RLin D
(MHz)
(s) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215 128 10 50 130 19 10 54
1200 to 1400 300 10 50 130 17 10 50
Pdroop(pulse) (dB) 0 0
tr (ns) 15 15
tf (ns) 8 8
1.2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applica...
