BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010
www.DataSheet4U.com
Product data sheet
1. Pr...
BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply
voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
NXP Semiconductors
BLL6H1214-500 www.DataSheet4U.com
LDMOS L-band radar power transistor
1.3 Applications
L-band power
amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description dr...