BLS7G2325L-105

BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) Pulse CW 2300 to 2500 900 30 110 16.5 55 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for S-band radar applications in the 2300 MHz to 2500 MHz frequency range NXP Semiconductors BLS7G2325L-105 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 11 3 [1] 22 3 sym112 Table 3. Ordering information Type number Package Name Description BLS7G2325L-105 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage ID drain current Tstg storage tem...