BLS7G2729LS-350P

BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 2.9 32 350 13 50 8 5 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation (2.7 GHz to 2.9 GHz)  Excellent thermal stability  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequent...