BLS7G3135LS-200

BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 32 200 12 48 8 6 3.3 32 200 12 46 8 6 3.5 32 200 12 43 8 6 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation  Excellent thermal stability  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Internally matched for ease of use (input and output)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range 3100 MHz to 3500 MHz NXP Semiconductors BLS7G3135LS-200 LDMOS S-band radar power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol   [1]   V\P Table 3. Ordering information Type number Package Name Description BLS7G3135LS-200 - earless flanged ceramic package; 2 leads Version SOT502B 4. Limiting values Table 4. Limiting values In accordance...