LDMOS S-band radar power transistor
BLS9G3135L-400; BLS9G3135LS-400
LDMOS S-band radar power transistor
Rev. 1 — 6 April 2017
Product data sheet
1. Produc...
Description
BLS9G3135L-400; BLS9G3135LS-400
LDMOS S-band radar power transistor
Rev. 1 — 6 April 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo circuit.
Test signal
f
VDS
PL
Gp
D
(GHz)
(V) (W) (dB) (%)
pulsed RF
3.1 to 3.5
32 425 12
43
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band operation Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 3.1...
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