BLT13

DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor FEATURES High efficiency High gain Internal pre-matched input. APPLICATIONS Hand-held radio equipment in common emitter class-AB operation for 1.8 GHz Time Division Multiple Access (TDMA) communication systems. PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION 1 4 MAM227 handbook, halfpage 8 BLT13 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION Pulsed, class-AB f (MHz) 1800 VCE (V) 6 PL (W) 2 Gp (dB) ≥6 ηC (%) ≥50 1996 Apr 12 2 Philips Semiconductors Preliminary specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 130 °C; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. MAX. 20 10 2.5 1 1 +150 175 BLT13 UNIT V V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junc...