BLT50

DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. PINNING - SOT223 BLT50 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION age f (MHz) VCE (V) 470 7.5 PL (W) 1.2 Gp (dB) > 10 ηc (%) > 55 4 c PIN 1 2 3 4 DESCRIPTION emitter base emitter collector 1 Top view handbook, halfpage b MBB012 e 2 3 MSB002 - 1 Fig.1 Simplified outline and symbol. April 1991 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz f > 1 MHz; Ts = 103 °C (note 1) − − − − − − MIN. BLT50 MAX. 20 10 3 500 1.5 2 UNIT V V V mA A W Tstg Tj Note storage temperature range operating junctio...