BLT52

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT52 UHF power transistor Product specification Supersedes data of 1997 Oct 15 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor FEATURES Emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-B operation in portable radio transmitters in the 470 MHz communication band. handbook, halfpage BLT52 PINNING PIN 1, 4, 5, 8 2, 3 6, 7 emitter base collector DESCRIPTION 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) 7.5 CW, class-B 470 6 3 PL (W) 7 Gp (dB) ≥8 typ. 9.5 ≥8 typ. 9.5 ηC (%) ≥50 typ. 65 ≥50 typ. 55 1998 Jan 28 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb ≤ 60 °C CONDITIONS open emitter open base open collector − − − − − −65 − MIN. MAX. 20 10 3 2.5 13 +150 200 BLT52 UNIT V V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER therma...