BLT92

DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation. PIN CONFIGURATION FEATURES internal input matching capacitor for a high power gain gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. PINNING 1 = collector 2 = emitter 3 = base 4 = emitter Fig.1 Simplified outline, SOT122D. 2 MSB055 BLT92/SL QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common-emitter class-B circuit MODE OF OPERATION CW (class-B) VCE (V) 7.5 f (MHz) 900 PL (W) 3.0 Gp (dB) > 7.0 ηC (%) > 50 handbook, halfpage 4 1 3 PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is entirely safe provided that the internal BeO disc is not damaged. May 1989 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current DC or average (peak value); f > 800 MHz Total power dissipation at Tamb < 120 °C; f >...