BLU60

DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES multi-base structure and emitter-ballasting resistors for an optimum temperature profile. internal matching to achieve an optimum wideband capability and high power gain. gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V 12,5 f MHz 470 PL W 60 Gp dB > 4,4 BLU60/12 The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. ηC % > 55 PIN CONFIGURATION PINNING PIN 1 DESCRIPTION emitter emitter base collector emitter emitter handbook, halfpage 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1986 2 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage ...