DISCRETE SEMICONDUCTORS
DATA SHEET
BLU86 UHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz communications.
UHF power transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
BLU86 UHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz communications band. PINNING - SOT223 PIN 1 2 3 4 DESCRIPTION emitter base emitter collector
1
Top view
MBB012
BLU86
QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION f (MHz) 900 VCE (V) 12.5 PL (W) 1 Gp (dB) >7 ηc (%) > 55
halfpage
4
c
handbook, halfpage
b
e
2
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
September 1991
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value; f > 1 MHz f > 1 MHz; Ts = 129 °C (note 1) − − − − − − MIN.
BLU86
MAX. 32 16 3 200 600 2
UNIT V V.