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BLV108
N MOSFET : :
N VDMOS，，
：
VDSS VGSS ID PD Tj, TSDG
(T=25℃ (T=25℃)
200 + 20 300 1...
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BLV108
N
MOSFET : :
N VDMOS，，
：
VDSS VGSS ID PD Tj, TSDG
(T=25℃ (T=25℃)
200 + 20 300 1 -55 to +150
V V mA W
o
Power Dissipation for Dual Operation
C
Rth j-a
Thermal Resistance, Junction to Ambient TA=25oC
o
125
K/W
200
V
BVDSS I DSS
I GSS
VGS = 0V , I D = 10uA VDS = 160V , VGS = 0V
VGS = ±20V , V DS = 0V
1 +100 0.4 1.8 5
uA nA
V
VGS (th ) R DS ( on )
V DS = VGS , I D = 1mA VGS = 2.8V , I D = 100mA
Ω
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-1Total 2 Pages
8/18/2006
BLV108
Ciss Coss Crss ton toff
Turn-On Turn-Off
VDS=25V，VGS=0V f = 1MHz
120 30 15 6 49 10 60
pF pF pF ns ns
VDD=50V, ID=250mA VGS=0 to 10V
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-2Total 2 Pages
8/18/2006
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