BLV1N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requiremen...
BLV1N60
N-channel Enhancement Mode Power
MOSFET
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
600V 8Ω 1A
Description This advanced high
voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS
ID
IDM
PD
EAS IAR EAR Tj TSDG
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value 600 + 20
1 0.63
4 28 0.22 14 1 2.8 -55 to +150 -55 to +150
Thermal Characteristics
Symbol Rth j-c Rth j-a
Parameter Thermal Resistance, Junction to case Max. Thermal Resistance, Junction to Ambient Max.
Value 4.5 110
http://www.belling.com.cn
-1Total 6 Pages
Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
3/28/2007
BLV1N60
N-channel Enhancement Mode Power
MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
Static Drain-Source On-Resistance
VGS=0V, ID=250uA Referenc...