DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV2042 UHF power transistor
Product specification Supersedes data of 1997 J...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV2042 UHF power transistor
Product specification Supersedes data of 1997 July 11 2000 May 08
Philips Semiconductors
Product specification
UHF power transistor
FEATURES Emitter ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS Common emitter class-AB operation in base stations in the 1800 to 1990 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base.
1 Top view 4
MSA467
BLV2042
PINNING - SOT409A PIN 1, 4, 5 and 8 2 and 3 6 and 7 emitter base collector DESCRIPTION
8 handbook, halfpage
5
c b e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB CW, class-AB 2-tone, class-AB f (MHz) 1950 1990 f1 = 1950; f2 = 1950.1 VCE (V) 26 26 26 PL (W) 4 4 4 (PEP) Gp (dB) ≥11 ≥11 typ. 14 ηC (%) ≥40 ≥40 typ. 35 dim (dBc) − − typ. −30
2000 May 08
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) collector curren...