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BLV2047 Datasheet

Part Number BLV2047
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BLV2047 DatasheetBLV2047 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for easy design of wideband circuits • AlN substrate package for environmental safety. APPLICATIONS handbook, halfpage BLV2047 PINNIN.

  BLV2047   BLV2047






Part Number BLV2046
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BLV2047 DatasheetBLV2046 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLV2046 UHF power transistor Product specification 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in PCN and PCS applications in .

  BLV2047   BLV2047







Part Number BLV2045N
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BLV2047 DatasheetBLV2045N Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for an easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in PCN and PCS applications in the .

  BLV2047   BLV2047







Part Number BLV2044
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BLV2047 DatasheetBLV2044 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation .

  BLV2047   BLV2047







Part Number BLV2042
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BLV2047 DatasheetBLV2042 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV2042 UHF power transistor Product specification Supersedes data of 1997 July 11 2000 May 08 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in base stations in the 1800 t.

  BLV2047   BLV2047







UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for easy design of wideband circuits • AlN substrate package for environmental safety. APPLICATIONS handbook, halfpage BLV2047 PINNING - SOT468A PIN 1 2 3 collector base emitter; connected to flange DESCRIPTION 1 • Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range. Top view 3 2 MBK200 DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 2000 f1 = 2000.0; f2 = 2000.1 VCE (V) 26 26 PL (W) 60 60 (PEP) Gp (dB) ≥8.5 ≥9 ηC (%) ≥40 ≥33 dim (dBc) − ≤−30 Fig.1 Simplified outline. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction tempe.


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