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BLV4N60

SHANGHAI BELLING

N-channel Enhancement Mode Power MOSFET


Description
BLV4N60 N-channel Enhancement Mode Power MOSFET Avalanche Energy Specified Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 600V 2.2Ω 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless oth...



SHANGHAI BELLING

BLV4N60

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