BLV7N60

BLV7N60 N-channel Enhancement Mode Power MOSFET Avalanche Energy Specified Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 600V 1.0Ω 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 7 4.43 28 125 1.0 667 7 12.5 -55 to +150 -55 to +150 Units V V A A A W W/℃ mJ A mJ o o C C Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Max. Max. Value 1.0 62.5 Units ℃/ W ℃/ W Page 1/6 http://www.Datasheet4U.com BLV7N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Cur...