BLV857

DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES Internal input matching for an optimum wideband capability and high gain Polysilicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATION Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange. 5 3 Top view 4 b2 BLV857 PINNING SOT324B PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1 collector 2 base 1 base 2 common emitters handbook, halfpage c1 2 b1 e 1 c2 MAM217 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the neces...