BLV859

DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES Double internal input and output matching for an optimum wideband capability and high gain Polysilicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATION Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. 5 3 Top view MAM031 BLV859 PINNING SOT262B PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1 collector 2 base 1 base 2 emitter handbook, halfpage c1 1 2 b1 e 5 4 b2 c2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose o...