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BLW81 Datasheet

UHF power transistor

ELEFLOW TECHNOLOGIES www.eleflow.com BLW81 UHF power transistor BLW81 Description: N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the UHF and VHF range for nominal supply voltages up to 13.5 V. The resistance stabilization of the transistor provides protection against device damage at seve.

ELEFLOW TECHNOLOGIES
BLW81.pdf

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ELEFLOW TECHNOLOGIES BLW81 Datasheet
ELEFLOW TECHNOLOGIES www.eleflow.com BLW81 UHF power transistor BLW81 Description: N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the UHF and VHF range for nominal supply voltages up to 13.5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. Features: The transistor is housed in a 1/4" capstan envelope with a ceramic cap. Data: Drawings: 1 ELEFLOW TECHNOLOGIES www.eleflow.com BLW81 2 .




BLW81 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications FEATURES: • PG = 6 dB Typical at 470 MHz • Omnigold™ Metallization System MAXIMUM RATINGS IC 2.5 A VCB 36 V PDISS 40 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 4.4 °C/W PACKAGE STYLE .280 4L STUD A.

ASI
BLW81.pdf

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ASI BLW81 Datasheet
BLW81 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications FEATURES: • PG = 6 dB Typical at 470 MHz • Omnigold™ Metallization System MAXIMUM RATINGS IC 2.5 A VCB 36 V PDISS 40 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 4.4 °C/W PACKAGE STYLE .280 4L STUD A 45° C BE E B D E F C J I G H K #8-32 UNC DIM MINIMUM inches / mm MAXIMUM inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 F .572 / 14.53 G .130 / 3.30 H .245 / 6.22 .255 / 6.48 I .640 / 16.26 J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 CHARACTERISTICS TC = 25 °C SYMBOL BVCEO BVCES BVEBO ICES hFE IC = 100 Ma IC = 25 Ma IE = 10 Ma VCE = 17 V VCE = 5.0 V TEST CONDITIONS VBE = 0 V IC = 1.25 A COB VCB = 12.5 V F = 1. 0 MHz POUT PG η VCE = 12.5 V PIN = 2.5 W F = 470 MHz MINIMUM TYPICAL MAXI.





DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabil.

NXP
BLW81.pdf

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NXP BLW81 Datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. Product specification BLW81 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp dB η % c.w. 12,5 470 10 > 6,0 > 60 c.w. 12,5 175 10 typ. 13,5 typ. 60 zi Ω 1,3 + j2,5 1,2 − j0,6 YL mS 150 − j66 140 − j80 PIN CONFIGURATION handbook, halfpage 4 1 3 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Top view 2 MBK187 Fig.1 Simplified outline..







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